Minimizing switching losses remains a major challenge for developers of SiC and GaN-based power semiconductor devices. The standard method for measuring switching parameters and evaluating the dynamic behavior of Si, SiC and GaN MOSFET and IGBT transistors is the Double Pulse Test.

Earth resistance measurement is essential for verifying the correct functioning of earthing systems after installation and during regular maintenance. Read how to ensure measurement in extreme conditions.

In today's digital age, AI servers are driving the world's most advanced technologies. This is linked to their increasing power requirements and testing demands.